Nexperia’s new X.PAK packaging combines high thermal performance, compact size, and easy assembly for high-power applications ...

branded ‘ICeGaN’, to modify the gate behaviour of GaN power transistors, without using cascode-pairing, to make them compatible with drivers made for traditional silicon mosfets. At the same time, it ...

Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100V eGaN FET that delivers superior performance, higher efficiency, and lower system costs for power conversion ...

Innoscience has released an improved bi-directional GaN transistor that can replace back-to-back silicon mosfets in high-side switching. Innoscience has released an improved bi-directional GaN ...