Innoscience vs Infineon If Innoscience reaches an agreement with EPC, it could then focus on its IP battle with Infineon.

Infineon provides AWL-E with CoolGaNTM GS61008P ... In June 2024, SK Keyfoundry (South Korea) advanced its 650V GaN HEMT technology, offering superior thermal efficiency and signal control ...

Infineon is also planning the release of MV BDS switches rated from 40 V – 120 V for static, battery disconnect applications that feature the Schottky gate GaN HEMT technology, in a two-drain, single ...

Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. CoolGaN Transistors G5 with integrated Schottky diode ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.