Abstract: We investigate in this letter the role the voltage ramp rate plays in the conduction and programming characteristics of bipolar-type memristive devices. It is shown that speeding up the ...

Abstract: Electrochemical random access memory (ECRAM) based on transition metal oxides is a promising candidate as a next-generation synaptic device for in-memory computing (IMC), due to its highly ...

A programming language is a formal language that specifies a set of instructions that can be used to produce various kinds of output. Programming languages generally consist of instructions for ...