Double-data-rate synchronous dynamic random access memory (DDR SDRAM) physical-layer testing is a crucial step in making sure devices comply with the JEDEC specification. The ultimate goal is to ...
Today verification team are facing contradicting pressure, at one end they are asked to reduce the verification schedule while at other end the design complexity is increasing. To overcome the ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, today announced the launch of a new family of SLC NAND flash memory ...
Choosing the right type of memory is critical to ensure that the power and performance requirements are met for the target application. Memory technologies have significantly evolved over the last ...
Striving to achieve an integrated user experience, today’s devices are getting crammed with loads of features which operate on voluminous data traffic over various interfaces. For efficient processing ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Rambus Inc. (NASDAQ: RMBS), a premier chip and silicon IP provider making data faster and safer, today announced the expansion of its DDR5 memory interface chip ...
Download this article in PDF format. Today’s embedded systems require high external memory bandwidth to achieve fast boot time and application loading time with minimal cost. Historically, ...
A high-speed DDR2, DDR2/3, or DDR3 DRAM interface for off-chip memory provides a powerful tool to meet the high-performance demands of new electronic products. However, with advancements come new ...
In context: The first iteration of high-bandwidth memory (HBM) was somewhat limited, only allowing speeds of up to 128 GB/s per stack. However, there was one major caveat: graphics cards that used ...
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