Compound Semiconductor Market Compound Semiconductor Market Expected to Reach $347 Billion by 2031 - Allied Market Research Key fac ...

This article, based on a presentation at APEC 2025, outlines PCB design recommendations tailored for converters incorporating GaN HEMTs.

In this article, we summarize a novel concept that combines an integrated GaN HEMT with silicon Insulated Gate Bipolar Transistors (IGBTs).

Integrating the Schottky diode into a GaN transistor helps boost power-system efficiency by reducing dead-time losses.

Radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications required in on-orbit space vehicles, etc.

The GaN High Electron Mobility Transistor (HEMT) devices are used for mission-critical space applications like: On-orbit space vehicles Manned space exploration Deep space probes The HEMTs offer ...

The new HEMTs devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes. “The Infineon team continues to push the ...

Infineon reckons that pairing its 50-plus years in high-reliability with the brutal endurance of GaN HEMTs results in superior thermal handling, power density and efficiency.

Combining the robust performance of GaN HEMTs with Infineon 50+ years of experience in high reliability applications, the new power transistors deliver best-in-class efficiency, thermal management and ...

Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package.