This article presents a physics-based analytical model for the drain current of normally-off p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs). The core model, the first of its kind, is ...

Compound Semiconductor Market Compound Semiconductor Market Expected to Reach $347 Billion by 2031 - Allied Market Research Key fac ...

Key reliability challenges with GaN HEMTs GaN HEMTs used for power conversion applications are commercially produced mainly as p-gate enhancement-mode or native depletion-mode devices, whereby they ...

The District Court Munich, Germany, has ruled in favour of Infineon Technologies in a first instance patent infringement case concerning GaN.

Monolithically integrated GaN power ICs offer significant advantages over traditional silicon chips, including superior efficiency, smaller size, higher speed, and reduced cost.

Infineon IFX4.22%increase; green up pointing triangle Technologies raised its margin forecast for the fiscal year as demand for semiconductors powering vehicles, energy infrastructure and ...

The District Court Munich, Germany has ruled in favour of Infineon Technologies AG in a first instance patent infringement case concerning GaN technology between Infineon and Innoscience. The case, ...

In July, the world’s largest chipmaker and foundry Taiwan Semiconductor Manufacturing Co. (TSMC) said it would exit the gallium nitride (GaN) semiconductor segment, citing that the low-margin, ...

This article investigates the failure mechanisms of the gallium nitride high electron mobility transistors (GaN HEMTs) under overcurrent stress. The overcurrent behavior of GaN hybrid drain-embedded ...

The news about TSMC exiting the gallium nitride (GaN) foundry business has stunned the semiconductor industry, also laying the groundwork for integrated device manufacturers (IDMs) like Infineon ...

IMEC has been developing 200mm diameter GaN-on-QST power device solutions under its “Industry Affiliation Program on GaN Power Electronics Technology” for the industry program members since 2017. 650V ...