Samples of the half-bridge devices are available now. Single-switch samples will be available starting Q4 2024. For more information about Infineon’s GaN HEMT lineup, click here. Infineon Technologies ...

Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the ...

Infineon reckons that pairing its 50-plus years in high-reliability with the brutal endurance of GaN HEMTs results in superior thermal handling, power density and efficiency.

Infineon’s CoolGaN Gallium Nitride HEMTs are supported by the EVAL_1EDF_G1_HB_GAN and EVAL_2500W_PFC_G evaluation platforms. The EVAL_1EDF_G1_HB_GAN board features a CoolGaN 600 V HEMT and an Infineon ...

The GaN Qualification Plan developed by Infineon for its CoolGaN family of HEMT power devices. First, the application profile defines how the device will operate and be stressed in a given ...

Infineon’s CoolGaN 600 V enhancement-mode HEMTs are built using a reliable normally off concept optimized for fast turn-on and turn-off. According to the manufacturer, the gallium nitride (GaN) ...

The IGOT60R070D1A from Infineon uses 600V GaN on Silicon E-mode High Electron Mobility Transistors (HEMTs) in a small outline (SO) package. The CoolGaN technology allows high switching frequency ...

At Electronica, Infineon is showing off the benefits of its GaN portfolio – CoolGaN 600 V e-mode HEMTs and GaN EiceDRIVER ICs. They offer a higher power density enabling smaller and lighter designs, ...

GaN on Si HEMTs are good candidates to enter the 600/650V power devices sector but, at the same time, the improvement of silicon SJ MOSFET will keep them on the market and drive towards a ...

GaN on Si HEMTs are good candidates to enter the 600/650V power devices sector but, at the same time, the improvement of silicon SJ MOSFET will keep them on the market and drive towards a ...

Infineon is shipping the EiceDRIVER 1EDN71x6G HS 200V single-channel gate driver ICs family. The family is designed to enhance the performance of CoolGaN Schottky Gate (SG) HEMTs but is also ...

Combining the robust performance of GaN HEMTs with Infineon’s experience in developing high reliability applications, the power transistors deliver best-in-class efficiency, thermal management and ...