With strong IP protections and a reputation for stability, Singapore positions itself as a neutral, high-performance platform for innovation. On June 2, 2025, Singapore reached a major milestone with ...

Pulsiv has introduced its 65- to 70-W USB-C power modules that offer exceptional performance for integration into wall outlets, desks, and furniture. The groundbreaking power modules operate at a ...

Green hydrogen is defined as hydrogen produced from renewable energy. Splitting water into hydrogen and oxygen produces hydrogen. The most common way to do this is through electrolysis, which ...

This article begins a series of tutorials related to the QSPICE software for electronic circuit simulation.

The key to a drone’s design is the ability to control the motor’s speed and rotation. Most drones are powered by brushless DC motors, which require constant regulation of speed and direction of ...

Dr. Milan Rosina, principal analyst for Power Electronics and Batteries at Yole Développement (Yole), said that EV charging requires much higher voltage, power, and amount of energy transferred.

GaN transistors are significantly faster and smaller than silicon MOSFETs. GaN switching devices are available in two different types.

This year, Bosch took advantage of the PCIM event to assert its ambition to secure a significant position in the SiC market.

Compared to silicon, GaN allows to obtain important improvements, such as greater energy efficiency, smaller dimensions, lower weight, and lower overall cost.

Lower-voltage GaN FETs are reducing size, minimizing cooling requirements and improving efficiency for silicon power MOSFET applications.

Wide bandgap (WBG) semiconductors offer important advantages in terms of reliability, energy efficiency, power density, and cost reduction.

This article will discuss the potential advantages and challenges of diamond semiconductors in future power conversion applications, with a highlight on a new laser slicing technique.