KAWASAKI, Japan, November 12, 2024--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for ...
This file type includes high resolution graphics and schematics when applicable. In some situations, it becomes necessary to drive a MOSFET (or IGBT) with a voltage that’s lower than its ...
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