In order to develop the necessary technology, the project Magellan—High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application—was launched in 2024.

The race beyond silicon is already underway. As these emerging semiconductor materials become more viable, they will enable ...

Integrated GaN devices in server power supply unit designs enable higher efficiency and power density in data centers.

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in high-power switching systems. What are GaN HEMTs and why are they important?

With the transition from silicon transistors to gallium nitride (GaN) transistors ... Also: This portable power station has a standout feature that makes camping safer than ever Whether you ...

GaN power devices, which are already utilised ... which includes the 2023 adoption of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series. ROHM senior managing ...

imec, the research and innovation hub, has presented research that shows that despite their positive bias (on-state) ...

STMicroelectronics and Innoscience have joined forces to enhance GaN technology for AI data centers, EVs, and renewable ...

The ID Series GaN power transistors operate from 1.8GHz to 4.2GHz, with available saturated power levels of 410W, 460W, 700W, and 800W. Additionally, RFHIC provides 2-stage hybrid drive amplifiers ...

Their analysis reveals a strong overlap between these two ranges, confirming that GaN MISHEMTs remain stable within the ...