Innoscience vs Infineon If Innoscience reaches an agreement with EPC, it could then focus on its IP battle with Infineon.

Infineon provides AWL-E with CoolGaNTM GS61008P ... In June 2024, SK Keyfoundry (South Korea) advanced its 650V GaN HEMT technology, offering superior thermal efficiency and signal control ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

The company gave Electronics Weekly a detailed description of this when it introduced its second generation 40V symmetrical hemt. Gate threshold is typically 1.1V and can range across 800mV to 2.5V.

Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers ...

Log in to download the PDF of this article on how GaN HEMTs help bring greater efficiency to switching applications. Gallium-nitride (GaN) high electron mobility ...

Hanebeck said 2.3 times more GaN chips can fit on a 300mm wafer than on a 200mm wafer, bringing down the cost of production. (Reporting by Hakan Ersen, Writing by Louis van Boxel-Woolf, Editing by ...