Imec has demonstrated that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor ...

Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers ...

GaN HEMTs can also reach blocking voltages higher ... and Sriram Jagannath, Infineon, May 2024. 11. “GaN for DC-DC Conversion, LLC Converters,” Michael de Rooij, Alex Q. Huang, Qingyun Huang ...

Researchers have demonstrated a novel approach to generating terahertz (THz) radiation using N-polar AlGaN/GaN high-electron-mobility transistors (HEMTs) under asymmetric boundary conditions. This ...

Hanebeck said 2.3 times more GaN chips can fit on a 300mm wafer than on a 200mm wafer, bringing down the cost of production. (Reporting by Hakan Ersen, Writing by Louis van Boxel-Woolf, Editing by ...

Infineon Technologies is positioning itself at the forefront of a shift in server power architecture, driven by the rapid adoption of high-voltage direct current (HVDC) designs. As AI accelerates ...

The issue with GaN hemts is that, in their basic form ... or ‘p-GaN gate’ (GaN Systems, Infineon). A third, ‘misfet’ (metal-insulator-semicondutor fet) approach is of research interest only at the ...